钙钛矿结构锰氧化物块材的内耗及膜材的制备和输运性能的研究

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1、钙钛矿结构锰氧化物块材的内耗及膜材的制备和输运性能的研究摘要，‘活钛矿结构锰氧化物材料所表现出的巨磁电阻效应(CMR)，在提高磁存储密度以及磁传感器等方面具有十分广阔的应用前景。近几年，受到全世界的广泛关注。厂本论文简要说明了巨磁电阻材料的最新研究进展及其应用前景，主要介绍了锰氧化物材料的物理性能。通过实验研究了用固相反应法制备的Lao85Mn03块材的结构、电磁性能和低频内耗，得出结论：电阻峰和内耗峰与居里温度(磁化率的显著变化点)有很好的对应，来源于顺磁绝缘相到铁磁金属相的转变过程，可以用双交换机

2、制来解释。雠研究了La067Sro33Mn03／Lao85Mn03／ILao67Sro33Mn03和Lao67Sro33Mn03／LaMn03／Lao67Sro33MN03三层膜及{Lao678ro33MN03／LaossMn03}15和(Lao67SrossMnOs／LaMnOs}15多层膜的制备及其磁电阻效应爿祷膜是采用直流磁控溅射方法在(001)取向的LaAl03单晶基片上制备的。实验结果表明，多层膜的磁电阻效应比三层膜的磁电阻效应大。关键词：巨磁电阻效j立低频河耗居里泣爱磁化影双芟《。薄膜ZS

3、TUDIESONTHEINTERNALFRICTON1NBULKSANDTHESYNTHESISANDTRANSPORTPROPERTIESINTHINFILMSOFPEROVSKITEMANGANESEOXIE}ESABSTRACTThecolossalmagnetoresistance(CMRlbehaviorsinperovskite-manganeseoxideshaveattractedgreatattentionduetobothftmdamentaltheoryofcondensedma

4、tterphysitsandpotentialapplicationsofCMRmaterialsinmagneticdevices，e．g．，readandwriteheadsformagneticdisks，magneticrandomaccessmemoriesaswellasmagneticfieldsensors．Therefore．thestudyonCMReffecthasbecomeafocusofrecentcondensedphysicsandmaterialscience．Int

5、hepaper，webdeflyreviewsomenewprogressandthepotentialapplicationabouttheCMRmaterials．Wediscussedthephysicalperformanceofthesekindsofmaterials．Weexplainedtherelationshipsbetweenthepeakofinternalfriction(IF)andthepeakofelectricresistancesversustemperatureb

6、ystudyingthecrystalstructure，electromagnetictransportproperties，IFanddynamicmodulusinmanganeseoxidesLaossMn03．TheIFpeaktemperaturecorrespondingtoresistancepeaktemperatureandCurietemperature(anapparentturningpointatsusceptibilitycurve)canbeascribedtoatra

7、nsitionfromparamagneticinsulatortoferromagneticmetal，andwecaninterpretitbydoubleexchangemechanism．Wealsostudiedthesynthesisandmagnetic·resistancebehaviorofLa0678r033MN03／La085Mn03／La0678ro33MN03andLao67Sr033MN03／LaMn03／Lao678ro33Mn03tri-layerfilmsand{La

8、o6781"033MN03／La0．ssMn03)15and{Lao．678ro．33MN03／LaMn03}15multi·layerfilmsbyDCmagnetronsputtering．TheresultsshowthatCMReffectinmulti．1ayerfilmsislagerthall也atintri-layerfilms．KEYWORDS：colossalmagnetoresistanceeffect(CMR)；lowfreque