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1、ChargetransportinnanoscaleverticalorganicsemiconductorpillardevicesJanineG.E.Wilbers1,BojianXu1,PeterA.Bobbert1,2,MichelP.deJong1,WilfredG.vanderWiel1*.1NanoElectronicsGroup,MESA+InstituteforNanotechnology,UniversityofTwente,P.O.Box217,7500AEEnschede,TheNetherlands2MolecularMaterials
2、andNanosystems,DepartmentofAppliedPhysics,EindhovenUniversityofTechnology,P.O.Box513,5600MBEindhoven,TheNetherlands*W.G.vanderWiel@utwente.nl.ABSTRACTWereportchargetransportmeasurementsinnanoscaleverticalpillarstructuresincorporatingultrathinlayersoftheorganicsemiconductorpoly(3-hexy
3、lthiophene)(P3HT).P3HTlayerswiththicknessdownto5nmaregentlytop-contactedusingwedgingtransfer,yieldinghighlyreproducible,robustnanoscalejunctionscarryinghighcurrentdensities(upto106A/m2).Current-voltagedatamodelingdemonstratesexcellentholeinjection.Thisworkopensupthepathwaytowardsnano
4、scale,ultrashort-channelorganictransistorsforhigh-frequencyandhigh-current-densityoperation.1INTRODUCTIONForapplicationinlight-emittingdiodes,field-effecttransistorsandsolarcells,organicsemiconductors(OS)areplayinganincreasinglyimportantrole,owingtotheireasyprocessabilityandsuitabili
5、tyforlow-costandflexibleelectronics1,2.Propertiessuchascharge-carriermobility,solution-processability,crystallinityandinterfacepropertiesareimportantforimplementationoforganicsemiconductorsintoelectronicdevices3.Formanyapplications,likeorganiclight-emittingtransistors4ordisplaypixeld
6、rivers5,itiscrucialtoachievehighfrequencies(~10MHz)andlargecurrentdensities(10-20mA/cm2)6toimprovethedeviceperformance.Thiscanberealizedbychoosingorganicsemiconductorswithhighcarriermobility7,8,orbyreducingthechannellengthdowntothenanoscale9,asdemonstratedinthisLetter.Forthefabricati
7、onofsuchnanoscalejunctionlengthsinplanardevices,sourceanddrainelectrodeshavetobepatternedbynanolithographytechniques10,11.Averticalconfiguration,wheretheOSthinfilmissandwichedbetweentwo(metallic)contacts,isveryattractivebecausethechannellengthisdefinedbythethicknessoftheOSlayer,which
8、isverywellco