硅-氧化锌异质结.ppt

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1、Si(p-type)/ZnO(N-type)HeterojunctionFabricationElectricalPropertiesApplicationsFABRICATIONZnO:a=3.24982A,c=5.20661AEg=3.37eVSi:a=5.65754AEg=1.12eVLargelatticemismatch(about40%)FABRICATIONZnOFilmonSi:Sol–gelprocess;Magnetronsputtering;MO-CVDAtomicLayerDeposition…ZnOnan

2、orodonSi:Hydrothermalmethod;Electrodeposition(ECD);Thermalevaporation…AnnealingBuffer:ZnO,SiO2,GaN…ClickmeClickmeELECTRICALPROPERTIESHeterojunction:P-N;P-P;N-NHere,wefouseonSi(p-type)/ZnO(n-type)EF;Eg;Bandoffset;Electronaffinity;Barrier(electron/hole).ELECTRICALPROPER

3、TIESWithSiOxattheinterface:sol–gelprocessnc-ZnOfilmsonp-typesingle-crystallineSia=3.249A；c=5.202AhexagonalwurtzitestructureAppliedSurfaceScience252(2006)3449–3453ELECTRICALPROPERTIES(FORWARDBIAS)A:TunnelingmechanismRecombinationofelectrons,tunnelingfromZnOintothegapst

4、atesinSi,andholestunnelingacrosstheheterojunctionbarrierfromp-Sitonc-ZnOAPPLIEDPHYSICSLETTERS90,243106(2007)First,depositZnOcrystallineseedsbysol-geltechnique;thangrowZnOnanostructuresbyhydrothermalmethodELECTRICALPROPERTIES(FORWARDBIAS)I:thermallygeneratedcarriertunn

5、eling；II:recombination-tunnelingmechanism；III:space-charge-limitedcurrent（SCLC）I:thermallygeneratedcarriertunneling；II:recombination-tunnelingmechanism；III:space-charge-limitedcurrent（SCLC）JOURNALOFAPPLIEDPHYSICS105,114504(2009)ELECTRICALPROPERTIES(FORWARDBIAS)Appl.Ph

6、ys.Lett.,Vol.83,No.14,6October2003RFmagnetronsputteringELECTRICALPROPERTIES(REVERSEBIAS)Visible:saturatedwithreversebiasUV:linearincreasewithbiasLimitionoftheZnObuffercrystallinity;Deep-leveldefects;Dislocationsbylargelatticemismatch;DiffuesdSiimpurity…APPLIEDPHYSICSL

7、ETTERS88,182112(2006)MOCVDAPPLICATION(ELPROPERTIES)J.Phys.Chem.C,Vol.114,No.35,2010Workingelectrode:Sisubstrate;Referenceelectrode:Saturatedcalomelelectrode;Depositionbath:0.1MKCland0.2mMZnCl2saturatedwithmolecularoxygenT=90℃BackAPPLICATION(ELPROPERTIES)SiOx:2nmDeposi

8、tingZnOthinfilmsonp-Si(111)substratesbymagnetronsputteringJOURNALOFAPPLIEDPHYSICS107,083701(2010)APPLICATION(ELPROPERTIES)cha