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1、氧化鋅薄膜在光電的應用陳三元教授交通大學材料科學與工程學系TraditionalTraditionalApplicationsofApplicationsofZnOZnO--basedmaterialsbasedmaterialsPiezoelectrictransducersVaristorsGassensorsOpticalwaveguidesAnti-UVcoatingPotentialandAdvantageofZnOAdvantagesofZnOfilm:RT/lowtemperatureproce
2、ssing(plastics)Largerexcitonbindingenergy~60meVDirectWideBandgap~3.3eVTransparentPotentialresearchtopicsinZnOfilm:Transparentconductingoxides(TCO)(Paneldisplays,Thin-filmtransistorsandSolarcells)Electro-opticdevices(Ultravioletlightemitters,p-typesZnOtoforma
3、p-njunction)Dilutedmagneticsemiconductors+R.L.Hoffman,Appl.Phys.Lett.82,733(2003)++SamuelJ.Ippolito,Proc.SPIE5274,416(2004)I.Transparentconductingoxides(TCO)DefrostersTouchdisplaypanelsFlexibleelectronicdevicesFlatpaneldisplaysIndium-BasedTCOMaterialsTin-doped
4、indiumoxide(ITO)iscurrentlythemostwidelyusedTCO.CrystallineITO(c-ITO),AmorphousITO(a-ITO),andIZO(a-IZO):*ITOtargets:ceramicInOcontainingbetween3wt%and10wt%SnO,232*IZOtargets:contain7–10wt%ZnO.*DepositiontemperatureforcrystallineITO:250–350°°°°C,*lowestresistivit
5、ycurrentlyavailable(1x10–4Ωcm).DisadvantageHowever,indiumisarelativelyscarceelementandITOfilmsisthelackofchemicalstability.Atpresent,almostallTCOthinfilmsaren-typesemiconductorsasitisextremelydifficulttofabricateap-typeTCOsemiconductor.ForSb-dopedTinOxide(SnO2)
6、Advantage:★Inexpensivebothintermsofrawmaterialsandprocessing,i.e.,spraypyrolysisfromthechloridesororganometallicprecursors.★Bestobtainedresistivitiesontheorderof6x10–4Ωcm,mobilitiesof20cm2/Vs,andcarrierconcentrations5~8x1020cm–3;★ReceivingmoreattentionforPVs,esp
7、eciallyfortheheterojunctionwithintrinsicthinlayer(HIT)cells(CdTe/SnOorCdSnO)224Disadvantage:★HigherprocesstemperaturesforthebestSnO-basedmaterialsare2around450oC.★LowerConductivitiesforSnO–basedmaterials,notasgoodasITO.2Doped-ZnOTCOMaterialsAdvantages:★Thin-fil
8、mresistivityaslowas2.4x10–4Ωcm.★Significantbenefits:resourceavailability,lowcost,non-toxicityhighchemicalandthermalstability,easylithographyrelativetoIn-baseds
