专用集成电路作业

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1、Assignment21.Giveadescriptivedefinitionforeachofthefollowingterms.(1)Startingsubstrate(2)Activeregion:TheregionsbetweenthesethickSiO2layers(3)LOCOSprocess:LOCalOxidationofSilicon(1)Fieldoxidelayer:重掺杂硅区上均生长一层厚的氧化层(2)ShallowTrenchIsolation(STI):anintegratedcircuitfeaturewhichpreventselectricalc

2、urrentleakagebetweenadjacentsemiconductordevicecomponents(3)Positiveresist:atypeofphotoresistinwhichtheportionofthephotoresistthatisexposedtolightbecomessolubletothephotoresistdevelopernegativeresist:atypeofphotoresistinwhichtheportionofthephotoresistthatisexposedtolightbecomesinsolubletotheph

3、otoresistdeveloper(4)Sputtering:aprocesswherebyatomsareejectedfromasolidtargetmaterialduetobombardmentofthetargetbyenergeticparticles(5)Reactiveionetching:anetchingtechnologythatHigh-energyionsfromtheplasma,generatedunderlowpressure(vacuum)byanelectromagneticfield,attackthewafersurfaceandreact

4、withit(6)Stronginversionlayer:半导体表面的少数载流子浓度等于体内的多数载流子浓度时,半导体表面形成的一种表面势近似为不变的数值，耗尽层电荷及耗尽层厚度有极大值状态称为强反型态。(7)ThresholdvoltageofMOStransistor：thegatevoltagewhereaninversionlayerformsattheinterfacebetweentheinsulatinglayer(oxide)andthesubstrate(body)ofthetransistor2.P-typewellina250nmtechnologyhast

5、hedopingconcentrationNA=1015atomscm-3.Findthelimitingvalueofdepletion-layerwidthwdandthetotalchargeQdcontainedinthedepletionregion.Useat300K;3.ComputetheNMOSandPMOSsaturationcurrentsISATNandISATPpermicronofwidthfora180nmtechnology.Assumeachannellengthof200nm,Å,VTN=0.5V,VTP=-0.5V,VDD=1.8V.UseNM

6、OS:PMOS:4.Asthevalueofthedrain-sourcevoltageisfurtherincreased,theassumptionthatthechannelvoltageislargerthanthethresholdallalongthechannelceasestohold.ThishappenswhenVGS-V(x)

7、edrainregionandthecurrentIDremainsconstant(orsaturates).Pleaseexplainwhythecurrentcankeepconstantinsteadofbeingzerowhiletheconductingchannelhasalreadydisappeared?Reference:[1]JamesD.Plummer,etal.,“Chapter2ModernCMOSTechnology,”SiliconVL