UTT50P10 100v p型mos to252封装p沟道mos管

UTT50P10 100v p型mos to252封装p沟道mos管

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时间:2022-10-11

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1、UNISONICTECHNOLOGIESCO.,LTDUTT50P10PreliminaryPowerMOSFET-50A,-100VP-CHANNELPOWERMOSFETnDESCRIPTIONTheUTCUTT50P10isaP-channelpowerMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithhighswitchingspeedandaminimumon-stateresistance.Itcanalsowithstandhighenergyintheavalanche.n

2、FEATURESVDS=-100VID=-50ARDS(ON)≤60mΩ@VGS=-10V,ID=-20AHighSwitchingSpeednORDERINGINFORMATIONOrderingNumberPackagePinAssignmentPackingLeadFreeHalogenFree123UTT50P10L-TA3-TUTT50P10G-TA3-TTO-220GDSTubeUTT50P10L-TF1-TUTT50P10G-TF1-TTO-220F1GDSTubeUTT50P10L-TF2-TUTT50P10G-TF2-TTO-220F2G

3、DSTubeUTT50P10L-TF3-TUTT50P10G-TF3-TTO-220FGDSTubeUTT50P10L-TM3-TUTT50P10G-TM3-TTO-251GDSTubeUTT50P10L-TN3-RUTT50P10G-TN3-RTO-252GDSTapeReelNote:PinAssignment:G:GateD:DrainS:SourcenMARKING深圳市骊微电子科技有限公司5of5UTT50P10PreliminaryPowerMOSFETnABSOLUTEMAXIMUMRATINGS(TC=25°C,unlessotherwis

4、especified)PARAMETERSYMBOLRATINGSUNITGate-SourceVoltageVGSS±20VDrainCurrentContinuousID-50APulsedIDM-90APowerDissipationTO-220PD140WTO-220F/TO-220F1TO-220F228WTO-251/TO-25240WJunctionTemperatureTJ+150°CStorageTemperatureTSTG-55~+150°CNote:Absolutemaximumratingsarethosevaluesbeyond

5、whichthedevicecouldbepermanentlydamaged.Absolutemaximumratingsarestressratingsonlyandfunctionaldeviceoperationisnotimplied.nTHERMALDATAPARAMETERPACKAGESYMBOLRATINGSUNITJunctiontoAmbientTO-220/TO-220FTO-220F1/TO-220F2θJA62.5°C/WTO-251/TO-25250°C/WJunctiontoCaseTO-220θJC0.89°C/WTO-2

6、20F/TO-220F1TO-220F24.46°C/WTO-251/TO-2523.12°C/WNote:DevicemountedonFR-4substratePCboard,2ozcopper,with1inchsquarecopperplate.nELECTRICALCHARACTERISTICSPARAMETERSYMBOLTESTCONDITIONSMINTYPMAXUNITOFFCHARACTERISTICSDrain-SourceBreakdownVoltageBVDSSID=-250µA,VGS=0V-100VDrain-SourceLe

7、akageCurrentIDSSVDS=0.8×Max.rating,VGS=0V,TJ=25°C-1µAVDS=0.8×Max.rating,VGS=0V,TJ=125°C-500Gate-SourceLeakageCurrentForwardIGSSVGS=+20V+100nAReverseVGS=-20V-100nAONCHARACTERISTICSGateThresholdVoltageVGS(TH)VDS=VGS,ID=-250µA-1.0-3.0VStaticDrain-SourceOn-StateResistanceRDS(ON)VGS=-1

8、0V,ID=-20A60mΩVGS=-4.5V,ID=-15A65

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