zrc涂层与其复合涂层的制备和性能分析

zrc涂层与其复合涂层的制备和性能分析

ID:33960129

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页数:78页

时间:2019-03-02

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1、硕士学位论文ABSTRACTABSTRACTToimproveanti—ablationbehavioroftheC/Ccomposite,thisreaserchdepositedtheZrCorZrC/SiCfilmfortheprotectfilmontheC/Ccomposition.ZrCfilmwasdepositedbychemicalvapordepositionwithZrCl4-CH4一Arsystem,andZrCl4wastransportedinsolid.ThecharactersoftheSO-preparedZrCfilmwereanalyzedbych

2、emicalthermodynamicscalculatingandexperimenting.Theeffectsofpreparationparametersonthecomposition,surfacemorphologyandmicrostructureofZrCcoatingwerestudiedbyX.raydiffractometry,energydispersivespectroscopyandscanningelectronmicroscopyandsoon,suchasdepositiontemperature,H2gasflux,C/Zrratio,deposi

3、tionpressanddepositionposition,andsetdowntheperfactpreparationtechnics.Themechanicalbehaviorandtheablationbehaviorofthedifferentmicrostructureswerestudiedrespectivelybynano.indetationtestandDR6130oxyacetylenetorch.TheSiCfilmwasregardasthetransitionflimtodecreasetheendogeneticforce.Thereasurchfin

4、dasfollowed:thepreparationmethodinthisreasurchfallsdownthechemicalVapordepositiontemperature.AnditiSeasytogetwidespread、homogeneousZ圮filminstructure.Withthetempreturegoingup,H2gasfluxincreasing,C/Zrratiodecreasinganddepositionpressdecreasing,Ccontentdecreases,thecrystalplane(200)ofZrCfilmgrowspr

5、eferentially,thedensityincreases,therigidityandelasticitysimulationincreasesrespectively11.67and6.32times.ablationratioinlineandmassdecreasesrespectivelybyalargemarginthantheworse.T11edepositionratiogoesupwiththetempretureandtheC/Zrratioincreasing.However,thedepositionratioincreasesfirstly,andth

6、endecreaseswiththeH2gasfluxincreasing.TheresultsshowthattheperfactpreparationtechnicsinpreparatingZrCfilm:thetempreture:1450-1600℃;C/Zr=1;C/H≤1/15;Thedepositionpress:3~5KPa.RelativetothesingleZrCfilm,thecompositefilmchangesunconspicuousinablationratioinline,butdecreases73%inablationratioinmass,a

7、nddiminishinablationcrack.Asaresult,theSiCfilmregardsasthetransitionflimdecreasetheendogeneticforcebetweentheITABSTRACTbehavior硕士学位论文目录目录摘要⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯.IABSTRACT.......................................................

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