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1、HighperformanceMOCVD-grownInGaNLEDonSiTakashiEgawaResearchCenterforNano-DeviceandSystemNagoyaInstituteofTechnologyContents1.Introductionandpurpose2.Experimentalresults(1)Heteroepitaxialgrowth(2)Fabricationprocess(3)CharacterizationofInGaNMQWLEDonSiSurf
2、acemorphologyandcross-sectionalTEMobservationConductionbandoffsetatAlN/SiinterfaceI-V,L-I,spectrumandagingresult(4)InGaNLEDonSiwithdistributedBraggreflector(DBR)(5)Bondingandselectiveetchingtechnique3.ConclusionsIntroduction1.GaN-basedLEDonSipelectrode
3、pelectrode(1)AdvantageSimplicityoffabricationprocessp-GaNlayerLarge-scaleproductionp-AlGaNlayerInGaNactivelayerLowcostnelectrodeActivelayern-AlGaNlayerElectronicintegrationn-GaNLTGaNbufferlayerSisubstrate:n-SiCsub.LargesizeSapphiresub.Conductivepelectr
4、odenelectrodep-GaNlayerp-AlGaNlayerComparisonofsubstrateInGaNactivelayern-AlGaNlayerSubstrateSapphireSiCSiGaN/AlNmultilayerHTAlGaNlayerCostofSub.(2inch)10,000100,0001,000HTAlNlayerDicing,ScribeDifficultyDifficultyEasen-Sisub.Thermalconductivity(W/cmK)
5、0.424.91.5nelectrodeIntroductionPurposeLEDGrowthsequence1.S.Guhaetal.,Appl.Phys.Lett.,Vol.72(1998)p.415.MBE,Low-temperatureAlNbufferlayer(8nm,750C)Vf=9-12V,R=100Ω,Wavelength=420-430nm,@20mA2.C.A.Tranetal.,Appl.Phys.Lett.,Vol.75(1999)p.1494.HT-AlGaN/AlN
6、ThermalMOCVD,Low-temperatureAlNbufferlayer(20nm,750C)ILscleaningGrowthVf=8V,R=194Ω,Wavelength=465nm,@20mA3.J.W.Yangetal.,Appl.Phys.Lett.,Vol.76(2000)p.273.retuMBE/MOCVD,Low-temperatureAlNbufferlayer(10nm,800C)areSelectiveareagrowthpVf=11.5V,R=250Ω,Wave
7、length=465nm,@20mAmeT4.A.Dadgaretal.,Appl.Phys.Lett.,Vol.78(2001)p.2211.MOCVD,Low-temperatureAlNbufferlayer(30nm,720C)Low-temperatureVf=7V,R=80-130Ω,Wavelength=476nm,@20mAbufferlayer→Low-temperature-grownAlNlayerisusedasbufferlayer.5.T.Egawaetal.,Jpn.J
8、.Appl.Phys.,Vol.41(2002)p.L663.MOCVD,High-temperature-grownAlGaN/AlNlayer(20/3nm,1130C)TimeVf=4.1V,R=30Ω,Wavelength=478,505nm,@20mAPurposeInGaNMQWLEDonSisubstrateusinghigh-temperature-grownAlGaN/AlNintermediatelayersbyMOCVDSurfacemorpho
