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时间:2020-09-19
《Michael quirk_半导体制造技术_第四章_硅和硅片制备ppt课件.ppt》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库。
1、SemiconductorManufacturingTechnologyMichaelQuirk&JulianSerda©October2001byPrenticeHallChapter4SiliconandWaferPreparationObjectivesAfterstudyingthematerialinthischapter,youwillbeableto:1.Describehowrawsiliconisrefinedintosemiconductorgradesilicon.2.Explainthecrystalstruc
2、tureandgrowthmethodforproducingmonocrystalsilicon.3.Discussthemajordefectsinsiliconcrystal.4.Outlineanddescribethebasicprocessstepsforwaferpreparation,startingfromasiliconingotandfinishingwithawafer.5.Stateanddiscusssevenqualitymeasuresforwafersuppliers.6.Explainwhatise
3、pitaxyandwhyitisimportantforwafers.Semiconductor-GradeSiliconTable4.1CrystalStructureAmorphousMaterialsUnitCellsPolycrystalandMonocrystalStructuresCrystalOrientationSiHCl3PolycrystallinesiliconrodSiemensReactorforSGSiliconFigure4.1AtomicOrderofaCrystalStructureFigure4.2
4、AmorphousAtomicStructureFigure4.3UnitCellin3-DStructureUnitcellFigure4.4Faced-centeredCubic(FCC)UnitCellFigure4.5SiliconUnitCell:FCCDiamondStructureFigure4.6PolycrystallineandMonocrystallineStructuresPolycrystallinestructureMonocrystallinestructureFigure4.7AxesofOrienta
5、tionforUnitCellsZXY1110Figure4.8MillerIndicesofCrystalPlanesZXY(100)ZXY(110)ZXY(111)Figure4.9MonocrystalSiliconGrowthCZMethodCZCrystalPullerDopingImpurityControlFloat-ZoneMethodReasonsforLargerIngotDiametersCrystalseedMoltenpolysiliconHeatshieldWaterjacketSinglecrystals
6、iliconQuartzcrucibleCarbonheatingelementCrystalpullerandrotationmechanismCZCrystalPullerFigure4.10SiliconIngotGrownbyCZMethodPhotographcourtesyofKayexCorp.,300mmSiingotPhoto4.1CZCrystalPullerPhotographcourtesyofKayexCorp.,300mmSicrystalpullerPhoto4.2DopantConcentrationN
7、omenclatureTable4.2FloatZoneCrystalGrowthRFGasinlet(inert)MoltenzoneTravelingRFcoilPolycrystallinerod(silicon)SeedcrystalInertgasoutChuckChuckFigure4.11300mm200mm150mm125mm100mm75mm3²4²5²6²8²12²WaferDiameterTrendsFigure4.12WaferDimensions&AttributesTable4.388die200-mmwa
8、fer232die300-mmwaferIncreaseinNumberofChipsonLargerWaferDiameterFigure4.13DevelopmentalSpecificationsfor300-m
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